Probing Phonons in Nonpolar Semiconducting Nanowires with Raman Spectroscopy
Figure 6
(a) A plot showing the finite-size-induced phonon confinement effect (downshift and asymmetric broadening to lower energy) for different diameters of Si nanowires and the Lorentzian line shape of the bulk, for comparison. (b) Comparison of the Raman line shape of 8 nm diameter Si nanowires, taking diameter distribution into account and without diameter distribution. The peak downshift ~1 cm−1 and the line width broadened ~30%.
