Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips

<table>(a) AFM images of as deposited 50 nm ZnO thin film, (b) annealed at 400°C for 1 hour. Schematic views of ZnO thin film before (c) and after annealing (d).</table>

Journal of Nanotechnology

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Figure 6

Figure 6: Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips 