Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips

<table><svg height="10.575" id="M9" style="vertical-align:-0.20064pt" version="1.1" viewbox="0 0 26.737499 10.575" width="26.737499" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,10.575)">
<g transform="translate(72,-63.54)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝐼</tspan>
<tspan style="font-size: 12.50px; " x="7.1142068" y="0">-</tspan>
<tspan style="font-size: 12.50px; " x="11.277706" y="0">𝑉</tspan>
</text>
</g>
</g>
</svg> characteristics of ZnO nanowires on chip fabricated by MVLS approach in dark (a) and the corresponding current-time switching response (b) under UV light illumination at constant voltage of 0.3 V.</table>

Journal of Nanotechnology

fig9

Figure 9

Figure 9: Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips 