Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications

Figure 10

(a) SS versus 𝐼_d for TFETs. p-TFET exhibits sub-60 mV/decade swing for 3 decades of 𝐼_d, while n-TFET maintained sub-60 mV/decade for more than 2 decades of 𝐼_d (𝑉_ds=0.1 V). (b) SS variations on nanowire diameter of p-TFETs. SS increases as NW diameter gets wider.

(a)

(b)