Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications
Figure 13
(a) Comparison of P/E speed between vertical SiNW-based NC-SOncOS and SiN-SONOS, with gate length of 150 nm and wire diameter of 50 nm. (b) Retention characteristics at 85°C for vertical SiNW-based GAA SONOS and NC-SOncOS. (Reprinted with permission from [45]. [2011] IEEE.)