Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications
Figure 5
(a) A scanning electron microscope (SEM) image of an FUSI gate device after silicidation (440°C, 30 s) and removal of un-reacted Ni in H2SO4:H2O2:H2O solution. (b) Box plots of the distribution of measured devices for each split. extraction using linear extrapolation was done for over 10 devices in each split.
