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Journal of Nanotechnology
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Fig 9
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Review Article
Vertical Silicon Nanowire Platform for Low Power Electronics and Clean Energy Applications
Figure 9
(a) Measured
𝐼
𝑑
-
𝑉
𝑔
characteristics of (a) p-TFET and (b) n-TFET with SS = 30 mV/decade averaged over a decade.
(a)
(b)