Nanoscale Devices for Rectification of High Frequency Radiation from the Infrared through the Visible: A New Approach

Figure 14

(Color online) Rectification ratio as obtained for a geometrically asymmetric junction subject to an external bias 𝑉_ext(𝑡)=𝑉_ext cos(Ωt) with 𝑉_ext=1 (solid line), 0.1 (dashed_) and 0.01 V (dot-dashed line). The quantum of energy ħΩ ranges between 0.2 and 5 eV. The vertical lines indicate the height of the surface barrier (as measured from the Fermi level of the emitting metal) when 𝑉_ext(𝑡)=1 (dashed line, left), −1 (dashed line, right), and 0 V (solid Line) [18].