635705.fig.002
Figure 2: (a) As concentration profile in the nanoscale multilayer implanted with As fluence of 5 × 1 0 1 5  As/cm2 before (full line) and after (line with circles) the 950°C 80 min annealing process; the dashed lines represent the Si/SiO2 interfaces. (b) As concentration profiles for the nanoscale multilayers implanted with As fluence of 2 . 5 × 1 0 1 5 , 5 × 1 0 1 5 , and 1 × 1 0 1 6  As/cm2 after the 950°C 80 min annealing process; the dashed lines represent the Si/SiO2 interfaces. (c) “effective segregation coefficient” C m a x / C m i n , calculated as the ration of maximum As concentration at the Si/SiO2 interfaces and the minimum As concentration at the center of the Si layer, versus the As fluence. (d) Estimated values of the amount of As surface concentration trapped at each Si/SiO2 interface as a function of the As-implanted fluence.