635705.fig.004a
(a) 𝜀 1 and 𝜀 2 for bulk Si and Si NCs embedded in SiO2 after a 407 mJ/cm2 laser irradiation
635705.fig.004b
(b) 𝜀 1 and 𝜀 2 for bulk Si and Si NCs embedded in SiO2 after 5 × 1 0 1 5  As/cm2 ion implantation followed by a 407 mJ/cm2 laser irradiation
Figure 4: Optical constants 𝜀 1 (real part of the dielectric constant, related to the reflection coefficient) and 𝜀 2 (imaginary part of the dielectric constant, related to the extinction coefficient) measured by the spectroscopic ellipsometry.