(a) and for bulk Si and Si NCs embedded in SiO_{2} after a 407 mJ/cm^{2} laser irradiation

(b) and for bulk Si and Si NCs embedded in SiO_{2} after As/cm^{2} ion implantation followed by a 407 mJ/cm^{2 }laser irradiation

Figure 4: Optical constants (real part of the dielectric constant, related to the reflection coefficient) and (imaginary part of the dielectric constant, related to the extinction coefficient) measured by the spectroscopic ellipsometry.