A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping
Figure 4
Optical constants (real part of the dielectric constant, related to the reflection coefficient) and (imaginary part of the dielectric constant, related to the extinction coefficient) measured by the spectroscopic ellipsometry.
(a) and for bulk Si and Si NCs embedded in SiO2 after a 407 mJ/cm2 laser irradiation
(b) and for bulk Si and Si NCs embedded in SiO2 after As/cm2 ion implantation followed by a 407 mJ/cm2 laser irradiation