Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates

Figure 1

Cross-sectional schematic images of core-multishell nanowires with air gaps explaining the fabrication process. (a) GaAs/GaP nanowires on Si(111); (b) GaP nanowires after Au/GaAs removal; (c) alternated GaAs/GaInP shell growth at high temperature; (d) after removal of GaAs for air gaps.