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Journal of Nanotechnology
Volume 2013 (2013), Article ID 302647, 5 pages
http://dx.doi.org/10.1155/2013/302647
Research Article

Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots

1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2King Abdulaziz University, Jeddah 21589, Saudi Arabia
3Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan
4Electric and Computer Engineering Department, King Abdulaziz University, Jeddah 21589, Saudi Arabia

Received 1 July 2013; Accepted 30 July 2013

Academic Editor: Xiao Wei Sun

Copyright © 2013 T. Nowozin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

T. Nowozin, A. Wiengarten, L. Bonato, et al., “Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots,” Journal of Nanotechnology, vol. 2013, Article ID 302647, 5 pages, 2013. doi:10.1155/2013/302647