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Journal of Nanotechnology
Volume 2013 (2013), Article ID 736478, 9 pages
http://dx.doi.org/10.1155/2013/736478
Research Article

Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

Instituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, Mexico

Received 30 October 2012; Accepted 16 December 2012

Academic Editor: A. M. Rao

Copyright © 2013 Jhovani Bornacelli et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

The following is the list of published articles that have cited the current article.

  • J. Bornacelli, J. A. Reyes-Esqueda, L. Rodríguez-Fernández, J. L. Ruvalcaba-Sil, F. J. Jaimes, and A. Oliver, “Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals,” Journal of Nanotechnology, vol. 2014, pp. 1–7, 2014. View at Publisher ยท View at Google Scholar