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Journal of Nanotechnology
Volume 2013 (2013), Article ID 736478, 9 pages
http://dx.doi.org/10.1155/2013/736478
Research Article

Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation

Instituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, Mexico

Received 30 October 2012; Accepted 16 December 2012

Academic Editor: A. M. Rao

Copyright © 2013 Jhovani Bornacelli et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Jhovani Bornacelli, Jorge Alejandro Reyes Esqueda, Luis Rodríguez Fernández, and Alicia Oliver, “Improving Passivation Process of Si Nanocrystals Embedded in SiO2 Using Metal Ion Implantation,” Journal of Nanotechnology, vol. 2013, Article ID 736478, 9 pages, 2013. doi:10.1155/2013/736478