Table 1: Si-NCs preparation at 1.5 MeV.

SampleImplantationSteps thermal treatmentThermal treatment

ASi11100°C for 1 h in RA
BSi11100°C for 1 h in Ar
2510°C for 1 h in RA
A1Si11100°C for 1 h in RA
21100°C for 1 h in RA
A2Si11100°C for 1 h in RA
21100°C for 2 h in RA