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Journal of Nanotechnology
Volume 2013 (2013), Article ID 797964, 4 pages
http://dx.doi.org/10.1155/2013/797964
Research Article

Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure

1Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2Electric and Computer Engineering Department, King-Abdul-Aziz University, Jeddah 21589, Saudi Arabia

Received 26 June 2013; Accepted 23 July 2013

Academic Editor: John A. Capobianco

Copyright © 2013 Tobias Nowozin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Tobias Nowozin, Michael Narodovitch, Leo Bonato, et al., “Room-Temperature Hysteresis in a Hole-Based Quantum Dot Memory Structure,” Journal of Nanotechnology, vol. 2013, Article ID 797964, 4 pages, 2013. doi:10.1155/2013/797964