Review Article

Direct-Write Ion Beam Lithography

Table 4

Basic processing parameters attached to patterning objects and groups of objects and their typical values. Note that the typical values in this table are provided in general to cover various possible operating conditions in the diverse applications of IBL and that individual patterning tasks usually cover much smaller ranges.

Basic parameters of patterning objectsTypical values

Optional use of a gas injector or other assisting deviceYes/no

Ion beam energy (acceleration voltage)5–50 kV

Ion beam current and beam diameter (spot size)Smallest is below 1 pA and below 5 nm diameter. Largest is over 1 µA and over 1 µm

Dwell distance (distance between dwell points, also referred to as step size or pitch)50%–200% of spot size

Dwell time (duration of stay unblanked over a dwell point)50 ns–1 s

Scan style (order of dwell points inside an object, determined by a filling algorithm and performed by vector scanning)Line scans or concentric scans are typical, arbitrary paths are possible

Repetition number (objects and groups can be repeatedly scanned, also referred to as loops or passes)1–10000 for milling 
100–1000000 for gas assisted

Wait time (repeatedly scanned objects and groups can have a delay in between scans, also called refresh time)0-1 ms

Order number (objects and groups are scanned one after another in the order defined by this number.)Order numbers are assigned automatically if not set manually