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Journal of Nanotechnology
Volume 2014 (2014), Article ID 863184, 7 pages
http://dx.doi.org/10.1155/2014/863184
Research Article

Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals

Instituto de Física, Universidad Nacional Autónoma de México, 04510 México, DF, Mexico

Received 18 September 2013; Accepted 28 November 2013; Published 6 January 2014

Academic Editor: O. K. Tan

Copyright © 2014 J. Bornacelli et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

J. Bornacelli, J. A. Reyes-Esqueda, L. Rodríguez-Fernández, J. L. Ruvalcaba-Sil, F. J. Jaimes, and A. Oliver, “Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals,” Journal of Nanotechnology, vol. 2014, Article ID 863184, 7 pages, 2014. doi:10.1155/2014/863184