Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals
Figure 1
Plan-view TEM micrograph, obtained by using Z contrast technique (HAADF), showing Si-NCs formed inside a silica matrix (SiO2) after being annealed at 1100°C in RA a piece of SiO2 with Si ions implantation (1.5 MeV at a fluence of 2.5 × 1017 ions/cm2).
