863184.fig.001a
(a)
863184.fig.001b
(b)
Figure 1: Plan-view TEM micrograph, obtained by using Z contrast technique (HAADF), showing Si-NCs formed inside a silica matrix (SiO2) after being annealed at 1100°C in RA a piece of SiO2 with Si ions implantation (1.5 MeV at a fluence of 2.5 × 1017 ions/cm2).