A Review: Carbon Nanotube-Based Piezoresistive Strain Sensors
Figure 7
(a–c) curves for single-walled carbon nanotube devices on the membrane at 0, 5, 10, 15, and 0 psi ( = 10 mV). The arrows indicate the direction of the curves with increasing pressure. The first two devices are for small-gap semiconducting carbon nanotubes, and the third one is for semiconducting carbon nanotubes. (d–f) values of the curves versus strain and a fit to an exponential [8].
