Direct Current Sputter Epitaxy of Heavily Doped p⁺ Layer for Monocrystalline Si Solar Cells

Figure 2

RHEED patterns of the Si surface after growth of, respectively, (a) 100 nm, (b) 500 nm, and (c) 1000 nm Si film on Si(100), at the azimuthal angle.

(a) 100 nm

(b) 500 nm

(c) 1000 nm