Depth-Sensitive Raman Investigation of Metal-Oxide-Semiconductor Structures: Absorption as a Tool for Variation of Exciting Light Penetration Depth

Figure 3

Raman spectrum of silicon dioxide layer placed on silicon substrate after removal of one-phonon Si line. Maxima of narrow lines assigned to crystalline forms of silicon dioxide are given in the main plot (blue numbers). The maximum of one-phonon Si line is also given in main plot (black number). The inset presets the spectrum before removal of one-phonon Si line (black) and Lorentzian function used for reconstruction of silicon line (red).