Analysis of the Degradation of MOSFETs in Switching Mode Power Supply by Characterizing Source Oscillator Signals

Table 1

The results of fitting and goodness of fit.

General model	Goodness of fit
𝐹(𝑥)=𝑏∗exp(−𝛼∗𝑥)+𝑐∗exp(𝑑∗𝑥)	SSE	𝑅-square	Adjusted 𝑅-square	RMSE
𝐹(𝑥)=1.408∗exp(−1321𝑥)+1.939∗exp(−6.227𝑥)	0.1662	0.9973	0.9973	0.01689
𝐹(𝑥)=1.423∗exp(−1408𝑥)+1.949∗exp(−6.536𝑥)	0.1496	0.9975	0.9975	0.01602
𝐹(𝑥)=1.493∗exp(−1493𝑥)+1.925∗exp(−11.35𝑥)	0.1056	0.9984	0.9984	0.01346
𝐹(𝑥)=1.604∗exp(−1604𝑥)+1.877∗exp(−1.944𝑥)	0.0846	0.9986	0.9986	0.01212
𝐹(𝑥)=1.350∗exp(−1832𝑥)+1.833∗exp(−4.550𝑥)	0.0979	0.9977	0.9977	0.01304
𝐹(𝑥)=1.368∗exp(−1990𝑥)+1.799∗exp(−0.300𝑥)	0.1853	0.9953	0.9952	0.01793