Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET

<div>Comparison of transconductance for HZO, Al<sub>2</sub>O<sub>3</sub>, and HfO<sub>2</sub>-based FinFET’s by stepping up the gate voltage, V<sub>g</sub> from 0 to 2 V.</div>

Modelling and Simulation in Engineering

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Figure 8

Figure 8: Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET 