Development of Laser-Produced Tin Plasma-Based EUV Light Source Technology for HVM EUV Lithography

Table 1

Target specification of EUV source, GL200E for HVM.

Model number	Units	Gigaphoton GL200E
EUV clean power (at I/F)	W	250 (in-band; after filtering IR and DUV)
EUV pulse energy (at I/F)	mJ	~2.5
Max. rep. rate	kHz	~100
Max. CO2 laser system	kW	20 (100 kHz, 200 mJ/pulse)
Target material and shape		Liquid Sn droplet, spherical
Droplet size (diameter)	𝜇m	10–30
Plasma creation scheme		Double-pulse laser shooting
Debris mitigation scheme		Hybrid: magnetic field guiding and chemical etching