Analytical Approach to Model and Diagnostic Distribution of Dopant in an Implanted-Heterojunction Rectifier Accounting for Mechanical Stress

Figure 2

Spatial distributions of implanted dopant after annealing with continuance Θ=0,0048𝐿²/𝐷₀ (curves 1, 3, and 5) and Θ=0,0057𝐿²/𝐷₀ (curves 2, 4, and 6). Curves 1 and 2 are experimental data in homogenous structure (see [15, 16], resp.); curves 3 and 4 are analogous calculated results; curves 5 and 6 calculated results for 𝐻 at 𝐷₂/𝐷₁=0.6. Coordinate of interface between layers of 𝐻 is 𝑎=𝐿/2.