﻿<?xml version="1.0" encoding="utf-8"?><rss version="2.0"><channel><title>Research Letters in Physics</title><link>http://www.hindawi.com</link><description>The latest articles from Hindawi Publishing Corporation</description><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright><item><title>Comparison of the Solid Solution Properties of Mg-RE (Gd, Dy, Y) Alloys with Atomistic Simulation</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/476812</link><description>Molecular dynamic simulations have been performed to study the solid solution mechanism of Mg100-xREx (RE=Gd,Dy,Y, x=0.5,1,2,3,4&amp;#8201;&amp;#8201;at.&amp;#37;). The obtained results reveal that the additions of Gd, Dy and Y increase the lattice constants of Mg-RE alloys. Also the axis ratio c/a remains unchanged with increase in temperature, restraining the occurrence of nonbasal slip and twinning. Furthermore, it is confirmed that bulk modulus of Mg alloys can be increased remarkably by adding the Gd, Dy, Y, especially Gd, because the solid solubility of Gd in Mg decrease sharply with temperature in comparison with Dy and Y. Consequently, the addition of the RE can enhance the strength of Mg-based alloys, which is in agreement with the experimental results.</description><Author>Yurong Wu and Wangyu Hu</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Kleinberg Navigation on Anisotropic Lattices</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/346543</link><description>We study the Kleinberg problem of navigation in small-world networks when the underlying
lattice is stretched along a preferred direction. Extensive simulations confirm that maximally efficient navigation is attained when the length r of long-range links is taken from the distribution P(r)&amp;#x223C;r&amp;#x2212;&amp;#x03B1;, when the exponent &amp;#x03B1; is equal to 2, the dimension of the underlying lattice, regardless of the amount of anisotropy, but only in the limit of infinite lattice size, L&amp;#x2192;&amp;#x221E;. For finite size
lattices we find an optimal &amp;#x03B1;(L) that depends strongly on L. The convergence to &amp;#x03B1;=2 as L&amp;#x2192;&amp;#x221E; shows interesting power-law dependence on the anisotropy strength.</description><Author>J. M. Campuzano, J. P. Bagrow, and D. ben-Avraham</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Polarization Insensibility of Columnar Quantum Dot Structure Emitting at &amp;#x03BB;=1.55&amp;#x2009;&amp;#x03BC;m: A Theoretical Study</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/681397</link><description>Vertically stacked InAs/InP columnar quantum dots (CQDs) for polarization insensitive semiconductor amplifier in telecommunications applications are studied theoretically. An axial model is used to predict mechanical, electronic, and optical properties of these CQDs. A crossover from a dominant transverse electric (TE) optical ground state absorption to a dominant transverse magnetic (TM) absorption is predicted for a number of layers equal to about 9 in good agreement with the experiment. The weight of the light hole component of the valence band ground state increases as a function  of the number of layers. The change of the TE/TM polarization ratio is also associated to a symmetry change of the heavy hole component. A modification of the aspect ratio of the CQD seems to be the most important factor to explain the change of the electronic states configuration as a function of the strain distribution.</description><Author>J. Even and L. Pedesseau</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Ionic Conductivity and Phase Transition Behaviour in 4AgI-(1-x)PbI2-2xCuI System</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/249402</link><description>Samples of general formula 4AgI-(1-x)PbI2-2xCuI, x=0&amp;#x02013;0.4, have been prepared and investigated by XRD, DSC, and temperature-dependent conductivity studies. X-ray diffractograms showed the presence of binary system consisting of AgI and PbI2 in the sample x=0. Cu-substituted samples showed very similar diffractograms to that of the pure compound which indicates that no effect for the substitution on the nature of the binary system. DSC curves showed the presence of phase transition whose temperature increased with Cu+ ratio in the system. Ionic conductivity measurements confirmed the occurrence of the phase transition and showed that the high temperature phase is superionic conducting, whose conductivity increases with the increasing Cu+ amount in the system.</description><Author>Mohammed Hassan and Rfi Rafiuddin</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Optics of Chromites and Charge-Transfer Transitions</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/749305</link><description>Specific features of the charge-transfer (CT) states and O2p&amp;#x2192;Cr3d transitions in the octahedral (CrO6)9&amp;#x2212; complex are considered in the cluster approach. The reduced matrix elements of the electric-dipole transition operator are calculated on many-electron wave functions of the complex corresponding to the initial and final states of a CT transition.
Modeling the optic spectrum of chromites has yielded a complicated CT band. The model spectrum is in satisfactory agreement with experimental data which demonstrates the limited validity of the generally accepted concept of a simple structure of CT spectra.</description><Author>Andrei V. Zenkov</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Synthesis and Characterization of Neodymium Oxide in Silica Matrix by Solgel Protocol Method</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/237023</link><description>Formation of nanocrystalline rare earth was prepared by solgel route, using tetra-ethoxysilane and Nd (NO3)3 as precursor materials and HCl as a catalyst. The prepared samples were submitted to thermal treatments at temperature 500&amp;#x2218;C (5 hours) and 800&amp;#x2218;C (10 hours). Structural changes were investigated by XRD, FTIR spectroscopy, and SEM. At 800&amp;#x2218;C (10 hours) resulted in the formation of cubic Nd2O3 nanocrystallites with average size &amp;#x223C; 20&amp;#x2009;nm.</description><Author>Surender Duhan, Paveen Aghamkar, and M. Singh</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Storage of Energy in Disk-Shaped Laser Materials</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/717414</link><description>Thin disk laser is analyzed, assuming that the heat is drained in the same direction, as the optical pulse, withdrawing the stored energy, comes. Amplified spontaneous emission, the background loss, and overheating are taken into account with simple model. The scaling laws of the basic parameters are deduced. For the case of fixed repetition rate, the upper bound of thickness is obtained. Key parameters are suggested. The key energy parameter is promoted as criterion for evaluation of different laser materials for the high energy, high mean power disk lasers. The maximum energy per active element is estimated. For the scaling up the power and/or energy withdrawn from a single active element, the background loss should scale down inversely proportional to the cube of the background loss. This scaling law gives the criterion whether the heat should be drained in the direction orthogonal to the beam that withdraws the energy.</description><Author>Dmitrii Kouznetsov</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Light Emitting Diodes of Inverse Spin Valves</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/434936</link><description>Light emitting diodes made out of inverse spin valves of  a ferromagnetic half metal
sandwiched between two nonmagnetic metals are proposed. Based on a giant spin-dependent
chemical potential difference created under an external bias, the inverse spin valves are possible to emit light when electrons with the higher chemical potential flip their spins and become the electrons of the opposite spin with the lower chemical potential. The frequency of this type of light emitting diodes is tunable by
the bias.</description><Author>X. R. Wang</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>An Energy-Work Relationship Integration Scheme for Nonconservative Hamiltonian Systems</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/168231</link><description>This letter focuses on studying a new energy-work relationship numerical integration scheme of nonconservative Hamiltonian systems. The signal-stage, multistage, and parallel composition numerical integration schemes are presented for this system. The high-order energy-work relation scheme of the system is constructed by a parallel connection of n multistage scheme of order 2 which its order of accuracy is 2n. The connection, which is discrete analog of usual case, between the change of energy and work of nonconservative force is obtained for nonconservative Hamiltonian systems.This letter also shows that the more the stages of the schemes are, the less the error rate of the scheme is for nonconservative Hamiltonian systems. Finally, an applied example is discussed to illustrate these results.</description><Author>Fu Jingli, Chen Benyong, and Xie Fengping</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Differential Gain in InGaAsN/GaAs Double Quantum Well Structures by Numerical Simulations</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/786939</link><description>We performed numerical studies of differential gain in a coupled quantum well structures built from InGaAsN. Differential gain in In0.38Ga0.62As1_yNy/GaAs quantum well structures was determined and analyzed. A 10-band k_p  Hamiltonian matrix was used in the calculations and solved self-consistently with Poisson's equation. The effect of Nitrogen composition and barrier thickness on differential gain has been determined. The influence of Nitrogen composition on differential gain is significant whereas barrier effects are modest.</description><Author>M. S. Wartak, P. Weetman, and P. Rusek</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Experimental Investigation of the Transition to Spatiotemporal Chaos with a System-Size Control Parameter</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/891324</link><description>Using a localized laser-heating method to allow the use of system size as a control parameter, we experimentally investigate, using liquid-crystal electroconvection with soft boundary conditions, the onset of spatial temporal chaos (STC) with increasing system size. We find that temporal periodicity is significantly quenched as the system size increases. The increase of the fourth moment (kurtosis) of the temporal Fourier transform provides a very useful quantitative measure of the loss of temporal periodicity (hence the onset of STC) as the pattern size increases, and also provides a simple means for determining a natural chaotic length scale. This length scale is comparable to the length of vertical rows observed in the original pattern. Our experiments, thus, imply that there are well-defined building blocks, which in our case are easily visualized, that control the dynamics in STC liquid crystal convection. The results of our experiments appear to be consistent with the conclusions of recent STC computer simulations carried out by Fishman and Egolf.</description><Author>Daniel R. Spiegel and Elliot R. Johnson</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Molecular Field Calculation of Magnetization on NdRh2Ge2 Single Crystal</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/157070</link><description>Calculation of magnetization of the ternary single crystal compound NdRh2Ge2 has been carried out by using the wave-like molecular field model to explain the complex magnetic behavior. The field-induced magnetic structures having the propagation vectors, Q2=(0,0,39/40), Q3=(0,0,35/40), Q4=(0,0,31/40), and Q5=(0,0,0/40) (= the field-induced ferromagnetic phase) were proposed. Calculation on the basis of these structures and the antiferromagnetic phase with Q1=(0,0,1) well reproduces the experimental magnetization processes and H-T magnetic phase diagram.</description><Author>A. Himori, K. Hattori, and T. Shigeoka</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Observation of Quantum Confinement 
                        Effects with  Ultrashort Excitation in the Vicinity 
                        of Direct Critical Points  in Silicon Nanofilms</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/837503</link><description>We report on the observation of quantum confinement effects and the 
                  influence of surface-related states due to the formation of nanograins on ultrashort 
                  relaxation near the direct critical points of silicon nanofilms following UV-excitation. 
                  Direct photoexcitation of the samples in the vicinity of the &amp;#x0393; critical points of the first 
                  Brillouin zone has been achieved using femtosecond pulses in the spectra range of 
                  290&amp;#8211;400&amp;#x02009;nm. Transient absorption measurements show a substantial enhancement of 
                  state filling with decreasing the film thickness down to 5&amp;#x02009;nm due to quantum confinement 
                  in the z-direction. Furthermore, the state filling of surface-related states of nanograins 
                  suggests that the critical points of these states follow the ellipsometry extracted energy-curve.</description><Author>Andreas Othonos, Demetra Tsokkou, and Emmanouil Lioudakis</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Quantum Transitions by Change of Parameters and in Noninertial Motion</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/570167</link><description>As it is well known, a quantum system depending on parameters exhibits the (geometric) Berry phase when parameters
are varying in the adiabatic limit. A generalization of the Berry phase is given in the present paper for a nonadiabatic
change of parameters, which leads to quantum transitions in the system. This generalization is applied to
noninertial motions and it is shown that such motions may induce quantum transitions for a system in an external
field governed by Schrodinger&amp;#39;s equation.</description><Author>M. Apostol</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Structural, Elastic, and Electronic Properties of ReB2: A First-Principles Calculation</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/293517</link><description>The structural, elastic, and electronic properties of the hard material ReB2 have been investigated by means of density functional theory. The calculated equilibrium structural parameters of ReB2 
are in agreement with the experimental results. Our result of bulk modulus shows that it is a low compressible material. Furthermore, the elastic anisotropy is discussed by investigating the elastic stiffness constants. The charge density and the electronic properties indicate that the covalent bonding of Re-B and B-B plays an important role in formation of a hard material. The good metallicity and hardness of 
ReB2 might serve as hard conductors.</description><Author>Run Long, Ying Dai, Hao Jin, and Baibiao Huang</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Physics of Superpulses in Storage Ring Free-Electron Lasers</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/592869</link><description>Contradictory to the widespread perception, storage ring 
        free-electron lasers with substantial net gain can generate peak lasing power reaching
         GW levels in the so-called superpulse mode. This power level is sufficient for studies of 
         nonlinear processes and efficient intracavity harmonic generation. This letter describes the physics 
         of the superpulses and a phase-space refreshment in the electron beam responsible for this phenomenon.</description><Author>Vladimir N. Litvinenko</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>On the Spheroidal Semiseparation for Stokes Flow</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/135289</link><description>Many heat and mass transport problems involve particle-fluid systems, where the assumption of Stokes flow provides a very good approximation for representing small particles embedded within a viscous, incompressible fluid characterizing the steady, creeping flow. The present work is concerned with some interesting practical aspects of the theoretical analysis of Stokes flow in spheroidal domains. The stream function &amp;#x03C8;, for axisymmetric Stokes flow, satisfies the well-known equation E4&amp;#x03C8;=0. Despite the fact that in spherical coordinates this equation admits separable solutions, this property is not preserved when one seeks solutions in the spheroidal geometry. Nevertheless, defining some kind of semiseparability, the complete solution for &amp;#x03C8; in spheroidal coordinates 
  has been obtained in the form of products combining Gegenbauer 
  functions of different degrees. Thus, the general solution is 
  represented in a full-series expansion in terms of 
  eigenfunctions, which are elements of the space kerE2 (separable solutions), and in terms of generalized eigenfunctions, which are elements of the space kerE4 (semiseparable solutions). In this work 
  we revisit this aspect by introducing a different and simpler 
  way of representing the aforementioned generalized 
  eigenfunctions. Consequently, additional semiseparable solutions 
  are provided in terms of the Gegenbauer functions, whereas the 
  completeness is preserved and the full-series expansion is 
  rewritten in terms of these functions.</description><Author>George Dassios and Panayiotis Vafeas</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Nanopinholes-Based Optical Superlens</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/148505</link><description>A type of nanopinhole-based plasmonic structure is presented. It can realize superfocusing within
     micron-scale propagation distance with spatial resolution beyond diffraction limit. Cut-off wavelength effect is highlighted for understanding how periodicity distribution of the nanopinholes influences transmission and focusing through the structure. 
    Redshift peak transmission occurs while the periodicity increases. In addition, focusing property of the plasmonic structures is analyzed for the monochromatic illumination with different incident wavelengths ranging from 
    400&amp;#x2009;nm to 750&amp;#x2009;nm. The easy fabrication and high focusing performance of the proposed structures 
    may be used in data storage devices, bioimaging, and nanolithography.</description><Author>Yongqi Fu, Chunlei Du, Wei Zhou, and Lennie Enk Ng Lim</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Current Tunnelling in MOS Devices with
            Al2O3/SiO2 Gate Dielectric</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/286546</link><description>With the continued scaling of the SiO2 thickness below 2&amp;#x2009;nm in CMOS devices, a large direct-tunnelling current flow between the gate electrode and silicon substrate is greatly impacting device performance. Therefore, higher dielectric constant materials are desirable for reducing the gate leakage while maintaining transistor performance for very thin dielectric layers. Despite its not very high dielectric constant (&amp;#x223C;10), Al2O3 has emerged as one of the most promising high-k candidates in terms of its chemical and thermal stability as its high-barrier offset. In this paper, a theoretical study of the physical and electrical properties of Al2O3 gate dielectric is reported including I(V) and C(V) characteristics. By using a stack of Al2O3/SiO2 with an appropriate equivalent oxide thickness of gate dielectric MOS, the gate leakage exhibits an important decrease. The effect of carrier trap parameters (depth and width) at the Al2O3/SiO2 interface is also discussed.</description><Author>A. Bouazra, S. Abdi-Ben Nasrallah, M. Said, and A. Poncet</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Computer Modeling of Displacement Cascades in Beryllium Irradiated with Intensive Neutron Flux</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/746892</link><description>Computer simulations of the radiation defects created in beryllium irradiated by fast neutrons (E&amp;#x003E;0.1&amp;#x2009;MeV) using
the Geant4 and SRIM packages were carried out. The atom cascade displacements in Be at a neutron fluence
of 1.6&amp;#x00D7;1020&amp;#x2009;n/cm2 were determined to be 0.06&amp;#x2009;dpa and the helium concentration was calculated to be 168&amp;#x2009;appm. The
concentration of L6i has been estimated to be 5&amp;#37; in comparison to the He concentration. Nanoscale calculations
were done in 30&amp;#x00D7;30&amp;#x00D7;30&amp;#x2009;nm cube of fast neutron-irradiated Be. A correlation between the Be primary knock-on atom 
(PKA) energies and the damage cascades has been established. The final defect distributions of single vacancies,
divacancies, and small vacancy clusters were examined. Our results indicate that the damages caused by He atoms
are about 3 times less than damages caused by Be primary knock-on atoms (PKAs).</description><Author>T. Troev, N. Nankov, L. Petrov, and E. Popov</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Study of Magnesium Diboride Clusters Using Hybrid Density Functional Theory</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/879017</link><description>Using hybrid density functional theory and a relatively large basis set, the lowest energy equilibrium structure, vibrational spectrum, and natural orbital analysis were obtained for magnesium diboride clusters [(MgB2)x for
x=1,2, and 3]. For comparison, boron clusters 
[Bx&amp;#x00A0;for&amp;#x00A0;x=2,4,&amp;#x00A0;and&amp;#x00A0;6] were also considered. The
MgB2 and 
(MgB2)2 showed equilibrium structures with the boron atoms in arrangements similar to what was obtained for pure boron atoms, whereas, for 
(MgB2)3 a different arrangement of boron was obtained. From the population analysis, large electron density in the boron atoms forming the clusters was observed.</description><Author>D. Rodr&amp;#237;guez, D. Soto, E. Ram&amp;#237;rez, A. Cruz, A. Santana, and G. E. L&amp;#243;pez</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>The Dyon Charge in Noncommutative Gauge Theories</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/890916</link><description>We construct a dyon solution for the noncommutative version of the Yang-Mills-Higgs model with a &amp;#x03D1;-term. Extending the Noether method to the case of a noncommutative gauge theory, we analyze the effect of CP violation induced both by the &amp;#x03D1;-term and by noncommutativity proving that the Witten effect formula for the dyon charge remains the same as in ordinary space.</description><Author>L. Cieri and F. A. Schaposnik</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item><item><title>Reduction of Time-Dependent Schr&amp;#xF6;dinger Equations with Effective Mass to Stationary Schr&amp;#xF6;dinger Equations</title><link>http://www.hindawi.com/GetArticle.aspx?doi=10.1155/2008/589269</link><description>We introduce a class of potentials for which the time-dependent Schr&amp;#xF6;dinger equation with
position-dependent (effective) mass allows reduction to a stationary Schr&amp;#xF6;dinger equation.
This reduction is done by a particular point canonical transformation which preserves L2-normalizability.</description><Author>Axel Schulze-Halberg</Author><copyright>&amp;#169; 2008, Hindawi Publishing Corporation. All rights reserved.</copyright></item></channel></rss>