Raman Spectra of High-κ Dielectric Layers Investigated with Micro-Raman Spectroscopy Comparison with Silicon Dioxide

Table 1

Refractive indices obtained for excitation wavelength equal to 300 nm and film thicknesses measured by means of spectroscopic ellipsometry for silicon dioxide, hafnium oxide, gadolinium-silicon oxide, and lanthanum-lutetium oxide.

Dielectric layer	𝑛 (𝜆 = 300 nm)	𝑑 [nm]
SiO2	1.495±0.005	64±2
HfO2 (“as-deposited”)	2.109±0.001	46±2
GdSiO	1.954±0.004	47.5±0.5
LaLuO3	2.077±0.001	8.0±0.3