Advancements in n-Type Base Crystalline Silicon Solar Cells and Their Emergence in the Photovoltaic Industry

Table 1

Best results for various n-type high efficiency cell structures.

Type	Structure	Metallization	𝑉oc (mV)	Efficiency (%)	References
Front surface field (FSF); rear emitter cells	n^+np^+ PERT; (rear emitter cell)	Plated Ag metallization	702	22.7	[32]
	n^+np^+ (Al rear emitter)	Front evaporated TiPdAg,; Rear full area evaporated	649	20.1	[28]
	n^+np^+ (back contacts)	Screen printed	647	20.0	[33]
Back surface field (BSF); front emitter cells	IBC		721	24.2	[34]
	PERL (p^+nn^+)	Evaporated front grid,; rear full area evaporated	705	23.9	[35]
	PERT (p^+nn^+)	Evaporated front grid + plating,; rear full area evaporated	695	21.9	[36]
	p^+nn^+ (PANDA cell)	Stencil printed	649	20.0	[37]
	MWT (p^+nn^+); (back contacts)	Screen printed	644	19.7	[38]
Heterojunction with intrinsic; thin layer (HIT) solar cell	HIT cell	Screen printed	745	23.7	[39]
Ion implanted emitter cells	IBC	Evaporated; Al/Ti/Pd/Ag	650.1	20.0	[40]