100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

<table>Drain current-voltage characteristic of 100 nm AlSb/InAs HEMT. <svg height="18.362499" id="M17" style="vertical-align:-4.77652pt" version="1.1" viewbox="0 0 24.5875 18.362499" width="24.5875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
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<g transform="matrix(.012,-0,0,-.012,12.675,15.188)"><path d="M546 430q-14 -33 -37.5 -140t-38.5 -209q-29 -195 -156 -289q-29 -21 -70 -37t-78 -16q-62 0 -102.5 37t-40.5 69q0 27 26 48q19 15 25 -3q13 -43 46.5 -69t87.5 -26q55 0 83 21q29 22 50 65t43 140q14 64 29 163h-2q-55 -81 -149 -152q-59 -44 -102 -44q-23 0 -43.5 30
t-20.5 85q0 74 32.5 145.5t84.5 117.5q40 35 100 58.5t117 23.5q21 0 65 -8q30 -6 44 -6zM456 386q-40 16 -81 16q-29 0 -64 -13q-42 -17 -85 -97q-19 -36 -31.5 -86t-12.5 -86q0 -64 30 -64q20 0 52.5 21t60.5 52q74 81 95 123q26 62 36 134z" id="x1D454"></path></g><g transform="matrix(.012,-0,0,-.012,19.445,15.188)"><path d="M352 391q0 -31 -27 -44q-14 -7 -24 6q-39 48 -84 48q-23 0 -39.5 -15t-16.5 -40q0 -43 73 -90q49 -32 70 -58t21 -57q0 -58 -62 -105.5t-129 -47.5q-40 0 -75.5 25t-35.5 52q0 28 32 46q7 4 15 3t11 -6q19 -31 48.5 -50.5t54.5 -19.5q34 0 54 19.5t20 42.5q0 43 -65 81
q-97 56 -97 123q0 50 51 96q19 17 58 32.5t62 15.5q37 0 61 -18t24 -39z" id="x1D460"></path></g>
</svg> is varying from 0 V to −1.4 V with −0.2 V step. (Crosses are polarisation conditions for measurements at peak <svg height="17.262501" id="M18" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 19.5875 17.262501" width="19.5875" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink">
<g transform="matrix(.017,-0,0,-.017,.062,12.162)"><path d="M619 670q0 -13 -9 -26t-18 -19q-13 -10 -25 2q-36 38 -66 38q-31 0 -54.5 -50t-45.5 -185h120l-20 -31l-107 -12q-23 -138 -57 -293q-27 -122 -55 -184.5t-75 -109.5q-60 -61 -114 -61q-25 0 -47.5 15t-22.5 31q0 17 31 44q11 8 20 -1q10 -11 31 -19t35 -8q26 0 47 19
q34 34 71 253l54 315h-90l-3 12l31 30h70q28 138 90 204q35 37 75 57.5t70 20.5q26 0 45 -14t19 -28z" id="x1D453"></path></g>
<g transform="matrix(.012,-0,0,-.012,10.975,17.2)"><path d="M649 676l-22 -187l-33 -2q3 56 -12 94q-8 20 -31.5 26.5t-86.5 6.5h-74l-90 -491q-4 -23 -6 -36.5t1 -25t7 -16.5t18 -9t27 -5t41 -3l-6 -28h-286l4 28q68 5 84 18.5t28 76.5l94 491h-55q-74 0 -100.5 -6t-41.5 -23q-24 -29 -54 -98l-32 1q32 98 53 188h22q7 -18 15 -22
t37 -4h417q23 0 33.5 5t25.5 21h23z" id="x1D447"></path></g>
</svg>).</table>

The Scientific World Journal

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Figure 3

Figure 3: 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications 