100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

Table 1

Small-signal equivalent circuit parameters for 𝑉_𝑑𝑠 = 80 mV and 𝑉_𝑑𝑠 = 240 mv at peak 𝑓_𝑇.

𝑉𝑑𝑠 (mV)	𝑅𝐺  (Ω/mm)	𝑅𝐷  (Ω·mm)	𝑅𝑆 (Ω·mm)	𝑔𝑚 (S/mm)	𝑔𝑑 (S/mm)	𝐶𝑔𝑠 (fF/mm)	𝐶𝑔𝑑 (fF/mm)	𝑔𝑚2 (S/mm)	𝑅𝑔𝑔 (k Ω)
80	74	0.11	0.11	0.75	0.73	468	327	0.007	80
240	74	0.11	0.11	1.36	0.72	584	259	1.47	12