Dependence of Performance of Si Nanowire Solar Cells on Geometry of the Nanowires

Table 2

The values of diode parameter (shunt resistance, series resistance, diode ideality factor, and reverse saturation current density) obtained at 25°C from illuminated J-V curves.

Sample	𝑅sh (Ω cm^2)	𝑅𝑠 (Ω cm^2)	n	𝐽0 (A/cm^2)
A1	251.88	2.222	2.364	4.276𝐸−6
A2	452.49	2.625	1.788	2.363𝐸−7
A3 & B2	204.92	2.736	2.713	1.479𝐸−5
A4	645.16	3.415	2.531	8.937𝐸−6
B1	380.22	3.329	2.444	5.749𝐸−6
B3	45.72	2.058	5.356	5.211𝐸−4
B4	55.31	2.190	5.040	4.575𝐸−4