Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers

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</svg> of InGaN lasers under partial homogeneous gain broadening (form (<a href="https://static.hindawi.com/articles/tswj/volume-2014/475423/figures/#EEq3">2</a>)) and inhomogeneous gain broadening (form (<a href="https://static.hindawi.com/articles/tswj/volume-2014/475423/figures/#EEq10">9</a>)).</table>

The Scientific World Journal

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Figure 7

Figure 7: Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers 