Structural, Morphological, and Electron Transport Studies of Annealing Dependent In₂O₃ Dye-Sensitized Solar Cell

Table 1

XRD parameters of the In₂O₃ thin films annealed at 350°C, 450°C, and 550°C.

Annealing temperature (°C)		(°)	(nm)	(nm)	(nm)	(line^2/m^2)
350	(222)	30.525	0.296	10.136	8.3810	14.237 10^15
450	(222)	30.550	0.292	10.129	17.188	3.385 10^15
550	(222)	30.625	0.292	10.105	19.101	2.741 10^15