A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays

Figure 2

(a) Schematics of the different tunneling processes. Electron from conduction band to conduction band (ECB), electron from valence band to conduction band (EVB), and tunneling from valence band to valence band (HVB) processes. Energy band diagram for the tunneling processes under polarization. (b) If the incident electron energy () is less than the modified energy barrier () we use a direct tunnel expression. (c) If the incident electron energy () is greater than the modified energy barrier (), we use a Fowler-Nordheim expression. These expressions depend on the incident electron energy but also depend on the polarization voltage.

(a)

(b)

(c)