A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays

Figure 5

A single Si/SiO₂ Qd of = 1.5 nm placed in different positions between the two leads. is the distance from the left lead to the center of the Qd. The separation among the leads is 5 nm. ((a)-(b)) curve and accumulated charge for a centered Qd. The hole and electron currents are also shown. ((c)–(e)) curves for different Qd positions and ((e)-(f)) accumulated charge in the same cases.

(a)

(b)

(c)

(d)

(e)

(f)