A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays

Figure 6

(a) Obtained curves (electron/hole and total currents) for two layers of 10 Si/SiO₂ Qds. The system arrangement is described in the text. The Qds radius distribution is also shown in the inset. (b) Total accumulated charge ( where ) of the structure as a function of the external bias voltage. In the inset, a top view of the system is presented.

(a)

(b)