A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays

Table 1

Parameters used in the simulation in order to describe Si Qds embedded in insulator matrix. and are the free electron mass and the vacuum permittivity, respectively.

()	[23, 24]	(eV)	3.1 [25, 26]
()	[23]	(eV)	[25, 26]
()	[23]	(eV)	1.12 [25, 26]
()	[27]	()	3.9 [26, 28]
()	[27]	()	11.7 [26, 28]