Modeling of Memristive and Memcapacitive Behaviors in Metal-Oxide Junctions

Figure 11

Simulation results of metal-oxide junction showing pinched hysteresis between current components and voltage: (a) when the tunneling current is dominant; (b) when the capacitive current is dominant; (c) when tunneling current and capacitive current are comparable. Simulation results of pinched hysteresis between charge components and voltage: (d) when the tunneling current is dominant; (e) when the capacitive current is dominant; (f) when tunneling current and capacitive current are comparable. Simulation parameter: , , , , , , , , , , , , , , , , and . The three cases are different gap characteristics where it has different permittivity in the three cases with different barrier heights. For (a) and (b) , , and . For (c) and (d) , , and . For (e) and (f) , , and .

(a)

(b)

(c)

(d)

(e)

(f)