Modeling of Memristive and Memcapacitive Behaviors in Metal-Oxide Junctions

Figure 12

Simulation results showing the effect of changing device practical parameters (barrier height at and permittivity of sandwiched material) on device behavior plotting both current components (capacitive and tunneling) as in (a) and (c) and behavioral shape factor as in (b) and (d). Simulation parameter: , , , , , , , , , , , , , , , , and .

(a)

(b)

(c)

(d)