Modeling of Memristive and Memcapacitive Behaviors in Metal-Oxide Junctions

Figure 5

SPICE simulation results for a memcapacitor device using the proposed behavioral model with applying a sinusoidal voltage with 1 V amplitude as in (a) and a sequence of pulses with positive and negative polarities as in (b). In case of sinusoidal voltage in (a), the current is shifted by 90° and the device state changes smoothly in phase with applied voltage. In case of (b), the current almost equals zero when the voltage keeps constant, while it changes when there is a low-to-high transition or high-to-low transition. Device state also changes when the voltage is not zero. Current-voltage plot shows elliptic curve highlighting the capacitive behavior in (a) while it shows a pinched loop in (b) because the current and voltage drop to zero in the same time. The pinched hysteresis loops in current-voltage plots highlight device memory property in both cases. Simulation parameters: , , . , , , and .

(a)

(b)