Modeling of Memristive and Memcapacitive Behaviors in Metal-Oxide Junctions

Table 1

Simmons’ tunneling equation.

Voltage range	Forward bias	Reverse bias
Low; ()
Intermediate; ( reverse bias,; forward bias)
High; ( reverse bias,; forward bias)

: filament cross section area.
: electron charge.
: electron mass.
^*: barrier thickness.
: Plank’s constant.
: barrier height at the interface of the gap and filament.
: barrier height at the interface of the gap and second electrode.
is equal to which represents the tunneling barrier.