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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 13-19
http://dx.doi.org/10.1155/1998/10649

Monte Carlo Simulations of Impact Ionization Feedback in MOSFET Structures

Bell Labs, Lucent Technologies, 600 Mountain Avenue, Murray Hill, 07974, NJ, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Although impact ionization feedback is recognized as an important current multiplication mechanism, its importance as a carrier heating mechanism has been largely overlooked. This work emphasizes the inclusion of impact ionization feedback in Monte Carlo device simulations, and its implications for carrier heating in sub-micron CMOS and EEPROM technologies.