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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 143-146
http://dx.doi.org/10.1155/1998/12905

Smooth Quantum Hydrodynamic Model Simulation of the Resonant Tunneling Diode

Department of Mathematics, Arizona State University, Tempe 85287-1804, AZ, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance (NDR) when compared to simulations using the original O(2) QHD model. At both 300 K and 77 K, the smooth QHD simulations predict significant NDR even when the original QHD model simulations predict no NDR.