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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 423-428
http://dx.doi.org/10.1155/1998/19078

Hydrodynamic (HD) Simulation of N-Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model

Microelectronics Research Center, The University of Texas at Austin, Austin 78712, TX, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A quantum mechanical treatment of electron inversion layers is incorporated in the hydrodynamic (HD) transport model used in UT-MiniMOS. A physically based, yet computationally efficient, three-subband model is implemented in the HD simulation tool. The three-subband model, which is based upon solutions to Schrodinger's equation, has the important advantage of more accurately predicting the distribution of electrons in the inversion layers than does more conventional classical models. A more simplified quantum mechanical model with carrier heating effects included has also been developed. Terminal currents are calculated using these quantum mechanical models and the comparison with results from classical calculations indicates the importance of quantum mechanical effects in the deep submicron device simulations.