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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 313-317
http://dx.doi.org/10.1155/1998/26067

Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation

Department of Electronics and Electrical Engineering, Nanoelectronics Research Centre, Glasgow University, Scotland, Glasgow G12 8LT, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

In this paper we described a complete methodology to extract the RF performance of ‘real’ compound FETs from time domain Ensemble Monte-Carlo (EMC) simulations which can be used for practical device design. The methodology is based on transient finite element EMC simulation of realistic device geometry. The extraction of the terminal current is based on the Ramo-Shockley theorem. Parasitic elements like the gate and contact resistances are included in the RF analysis at the post-processing stage. Example of the RF analysis of pseudomorphic HEMTs illustrates our approach.