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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 181-183
http://dx.doi.org/10.1155/1998/28708

Hydrodynamic Device Modeling with Band Nonparabolicity

1Department of Physics and Engineering Physics, Stevens Institute of Technology, Hoboken 07030, New Jersey, USA
2U.S. Army Research Laboratory, Fort Monmouth 07703, New Jersey, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A semiconductor device model based on a set of quantum mechanically derived hydrodynamic balance equations are presented. This model takes full account of band nonparabolicity, in addition to its other useful features such as the explicit evaluation of momentum and energy relaxation rates, in the form of frictional force and energy loss rate, within the model, and inclusion of carrier-carrier interaction effects, such as dynamical screening. Numerical results of one-dimensional device simulations are presented and compared with parabolic approximations.