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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 475-480
http://dx.doi.org/10.1155/1998/35648

Transient Phenomena in High Speed Bipolar Devices

Department of Electrical and Computer Engineering, University of Waterloo, Ontario, N2L 3G1, Canada

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

A new numerical method is applied to the analysis of the charge partitioning in the quasi-neutral base of a BJT. The results show that the conventional, 1:2 collector/ emitter partitioning is not valid in general. High level injection increases the collector fraction, whilst fast switching decreases it.