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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 349-353
http://dx.doi.org/10.1155/1998/37965

A New HEMT Breakdown Model Incorporating Gate and Thermal Effects

Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper presents a comprehensive physical model for the breakdown process in HEMTs. The model is integrated into in a fast quasi-two-dimensional HEMT physical simulator. The work is based on a full study of the complex interactions between the different breakdown mechanisms and the influence of design parameters. The model takes account of tunnelling effects in the region of the gate metallization, and of the thermal effects in the active channel under the gate region.