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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 361-365
http://dx.doi.org/10.1155/1998/41638

Temperature Dependence of the Electron and Hole Scattering Mechanisms in Silicon Analyzed through a Full-Band, Spherical-Harmonics Solution of the BTE

Dipartimento di Elettronica, Informatica e Sistemistica, Università di Bologna, Viale Risorgimento 2, Bologna 40136, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

By adopting the solution method for the BTE based on the spherical-harmonics expansion (SHE) [1], and using the full-band structure for both the electron and valence band of silicon [2], the temperature dependence of a number of scattering mechanisms has been modeled and implemented into the code HARM performing the SHE solution. Comparisons with the experimental mobility data show agreement over a wide range of temperatures. The analysis points out a number of factors from which the difficulties encountered in earlier investigations seemingly originate, particularly in the case of hole mobility.